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dc.contributor.authorSuvacı, Ender
dc.contributor.authorSimkovich, G.
dc.contributor.authorMessing, G. L.
dc.date.accessioned2019-10-22T16:59:15Z
dc.date.available2019-10-22T16:59:15Z
dc.date.issued2000
dc.identifier.issn0002-7820
dc.identifier.urihttps://hdl.handle.net/11421/21795
dc.identifier.urihttps://dx.doi.org/10.1111/j.1151-2916.2000.tb01480.xen_US
dc.description.abstractThe oxidation kinetics and the fraction of aluminum that is oxidized via solid-gas reaction in reaction-bonded aluminum oxide (RBAO) compacts are shown to be strongly dependent on the oxidation temperature and the characteristics (size and green density) of the RBAO compact. Based on the Biot number, the oxidation process of RBAO compacts is controlled by convective heat transfer. Low heat transfer from the surface of the compact results in too-rapid oxidation, thermal gradients, and core-shell oxidation of the compacts. Uniform oxidation of RBAO compacts is possible by oxidizing at low temperatures (400 °-470 °C), where slow surface reaction of the aluminum particles controls the oxidation of the compact. A grain model is presented to cover both linear and nonlinear oxidation regimes during the oxidation of a RBAO compact, and this model predicts the experimental results when surface reaction of the aluminum particles is the rate-controlling mechanism and oxidation of the compact occurs uniformly.en_US
dc.language.isoengen_US
dc.relation.isversionof10.1111/j.1151-2916.2000.tb01480.xen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleReaction-bonded aluminium oxide (RBAO) process: II, the solid-state oxidation of RBAO compactsen_US
dc.typearticleen_US
dc.relation.journalJournal of the American Ceramic Societyen_US
dc.contributor.departmentAnadolu Üniversitesi, Mühendislik Fakültesi, Malzeme Bilimi ve Mühendisliği Bölümüen_US
dc.identifier.volume83en_US
dc.identifier.issue8en_US
dc.identifier.startpage1845en_US
dc.identifier.endpage1852en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorSuvacı, Ender


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