Güncel Gönderiler: Fen Fakültesi
Toplam kayıt 2379, listelenen: 1921-1940
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Diaquabis(N,N-diethylnicotinamide-kappa N-1)bis(4-methylbenzoato-kappa O)cobalt(II)
(Wiley-Blackwell, 2010)In the centrosymmetric mononuclear title complex, [Co(C8H7O2)(2)(C10H14N2O)(2)(H2O)(2)], the Co-II ion is located on an inversion center. The asymmetric unit contains one 4-methylbenzoate (PMB)anion, one N,N-diethylnicotinamide ... -
Preconcentration of phosphate ion onto ion-imprinted polymer
(Elsevier Science BV, 2008)In this study, selective separation and preconcentration of phosphate ions on the phosphate-imprinted chitosan-succinate beads have investigated. Chitosan-succinate, phosphate, epichlorohydrin were used as the complexing ... -
Synthesis of poly(N-alkyl-3,4-dihydrothieno[3,4-b][1,4]oxazine) derivatives and investigation of their supercapacitive performances for charge storage applications
(Pergamon-Elsevier Science LTD, 2013)Herein, pseudocapacitive performances of novel poly(4-methyl-3,4-dihydro-2H-thieno[3,4-b][1,4]oxazine) and poly(4-ethyl-3,4-dihydro-2H-thieno[3,4-b][1,4]oxazine) have been investigated for supercapacitor applications as ... -
Synergie between molecular imprinted polymer based on solid-phase extraction and quartz crystal microbalance technique for 8-OHdG sensing
(Elsevier Advanced Technology, 2008)Recently, the 8-hydroxy-2'-deoxyguanosine (8-OHdG) has been used as a marker to determine the oxidative stress. There is no any cheap and easy determination method based on chips and sensor systems for the determination ... -
11-Butyl-3-methoxy-11H-benzo[a]carbazole
(Wiley-Blackwell, 2010)The title compound, C(21)H(21)NO, consists of a carbazole skeleton with a methoxybenzene ring fused to the carbazole, and a butyl group attached to the carbazole N atom. The carbazole skeleton is nearly planar [maximum ... -
Syntheses and Electrochemical Characterization of Low Oxidation Potential Nitrogen Analogs of Pedot as Electrochromic Materials
(Electrochemical Soc Inc, 2016)In this study, the electropolymerization of ethyl andmethyl substituted asymmetrical nitrogen analogs of 3,4-ethylenedioxythiophene (OEt and OMe) were synthesized, characterized and their electrochemical properties were ... -
Double-imprinted potentiometric sensors based on ligand exchange for the determination of dimethoate
(Korean Institute Chemical Engineers, 2015)This paper describes a dimethoate imprinted polymeric potentiometric sensor for the determination of dimethoate that was designed by dispersing the dimethoate-imprinted polymer in dibutyl phthalate plasticizer and then ... -
Diaquabis(4-methylbenzoato-kappa O)bis(nicotinamide-kappa N-1)nickel(II)
(Wiley-Blackwell, 2010)The title Ni-II complex, [Ni(C8H7O2)(2)(C6H6N2O)(2)(H2O)(2)], is centrosymmetric with the Ni atom located on an inversion center. The molecule contains two 4-methylbenzoate (PMB) and two nicotinamide (NA)ligands and two ... -
4-[2-(2,2-Dimethyl-4,6-dioxo-1,3-dioxan-5-ylidene)hydrazin-1-yl]benzonitrile
(Wiley-Blackwell, 2010)In the title compound, C(13)H(11)N(3)O(4), the dioxane ring adopts an envelope conformation with the C atom bonded to the dimethyl group in the flap position [deviation = 0.613 (1) angstrom]. The nitrile group and the ... -
3,3 '-Dimethyl-4,4 '-(hexane-1,6-diyl)bis[1H-1,2,4-triazol-5(4H)-one]
(Wiley-Blackwell, 2010)The title compound, C(12)H(20)N(6)O(2), has a centre of symmetry. The molecule consists of two triazole rings joined by an aliphatic -(CH(2))(6)- chain. The crystal structure is stabilized by intermolecular N-H center dot ... -
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-pi-n photodetector grown on GaAs substrate
(Elsevier Science Sa, 2016)High quality InAs0.83Sb0.17 mid-wavelength infrared p-pi-n photodetector structure was grown with the aid of a GaSb transition layer on semi-insulating GaAs substrate by molecular beam epitaxy. The lattice mismatch and the ... -
Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors
(Elsevier Science BV, 2014)In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of ... -
N structure for type-II superlattice photodetectors
(Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al (x) Ga1-x As quantum well structures
(Springer, 2012)In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al (x) Ga1-x ... -
Low dark current N structure superlattice MWIR photodetectors
(Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
Electrochemical and electrical properties of novel mono and ball-type phthalocyanines
(Pergamon-Elsevier Science LTD, 2013)New mononuclear Co(II) phthalocyanine 3 and ball-type homobinuclear Cu(II)-Cu(II) and Zn(II)-Zn(II) phthalocyanines, 4 and 5 respectively, were synthesized using the corresponding metal salts and the 4,4'-(methane-5-meth ... -
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
(IOP Publishing LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs
(Elsevier Science BV, 2014)Undoped InAs1-xSbx epilayers with different compositions (0.55 <= x <= 0.78) were grown by molecular beam epitaxy on semi-insulating GaAs (1 0 0) substrates. The quality of the samples was determined by high resolution ... -
Experimental and theoretical investigations of novel synthesized organo-silane compounds and modified mesoporous silica materials
(Elsevier Science BV, 2019)In this study, the novel compounds (2,5-dimethoxy-methanimine propyltriethoxysilane; S1 and 3-ethoxy-salicylaldimine propyltriethoxysilane; S2) derived from aminopropyltriethoxysilane (APTES) were synthesized by a simple ...