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dc.contributor.authorHoştut, Mustafa
dc.contributor.authorKartal, D.
dc.contributor.authorErgün, Yüksel
dc.contributor.authorSökmen, İsmail
dc.date.accessioned2019-10-20T09:30:43Z
dc.date.available2019-10-20T09:30:43Z
dc.date.issued2007
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.urihttps://dx.doi.org/10.1088/0268-1242/22/4/023
dc.identifier.urihttps://hdl.handle.net/11421/17425
dc.descriptionWOS: 000246104100023en_US
dc.description.abstractWe present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 mu m, 9.5 mu m and 10.8 mu m respectively. The device operation is based on an intersubband bound to quasi-bound transition. Asymmetry in the barriers is shown to give rise to the dependence of the spectral line width on applied reverse bias.en_US
dc.language.isoengen_US
dc.publisherIOP Publishing LTDen_US
dc.relation.isversionof10.1088/0268-1242/22/4/023en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleTunable long-wavelength broad band asymmetric quantum well infrared photodetectoren_US
dc.typearticleen_US
dc.relation.journalSemiconductor Science and Technologyen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume22en_US
dc.identifier.issue4en_US
dc.identifier.startpage422en_US
dc.identifier.endpage426en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorErgün, Yüksel


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