dc.contributor.author | Hoştut, Mustafa | |
dc.contributor.author | Kartal, D. | |
dc.contributor.author | Ergün, Yüksel | |
dc.contributor.author | Sökmen, İsmail | |
dc.date.accessioned | 2019-10-20T09:30:43Z | |
dc.date.available | 2019-10-20T09:30:43Z | |
dc.date.issued | 2007 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.issn | 1361-6641 | |
dc.identifier.uri | https://dx.doi.org/10.1088/0268-1242/22/4/023 | |
dc.identifier.uri | https://hdl.handle.net/11421/17425 | |
dc.description | WOS: 000246104100023 | en_US |
dc.description.abstract | We present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 mu m, 9.5 mu m and 10.8 mu m respectively. The device operation is based on an intersubband bound to quasi-bound transition. Asymmetry in the barriers is shown to give rise to the dependence of the spectral line width on applied reverse bias. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP Publishing LTD | en_US |
dc.relation.isversionof | 10.1088/0268-1242/22/4/023 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.title | Tunable long-wavelength broad band asymmetric quantum well infrared photodetector | en_US |
dc.type | article | en_US |
dc.relation.journal | Semiconductor Science and Technology | en_US |
dc.contributor.department | Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü | en_US |
dc.identifier.volume | 22 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.startpage | 422 | en_US |
dc.identifier.endpage | 426 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.contributor.institutionauthor | Ergün, Yüksel | |