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dc.contributor.authorNutku, Ferhat
dc.contributor.authorErol, Ayşe
dc.contributor.authorArıkan, M. Çetin
dc.contributor.authorErgün, Yüksel
dc.date.accessioned2019-10-20T09:13:17Z
dc.date.available2019-10-20T09:13:17Z
dc.date.issued2014
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2014.01.054
dc.identifier.urihttps://hdl.handle.net/11421/16802
dc.description9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEYen_US
dc.descriptionWOS: 000344380500018en_US
dc.description.abstractIn this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetectoren_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [108T721]; COST Action [MP0805]; Scientific Research Projects Coordination Unit of Istanbul University [3587]en_US
dc.description.sponsorshipThis study was partially supported by The Scientific and Technological Research Council of Turkey (TUBITAK) Project Number 108T721, partially supported by COST Action MP0805, partially supported by Scientific Research Projects Coordination Unit of Istanbul University, Project Number 3587. We are also grateful to University of Sheffield for growing the QWIP structure.en_US
dc.language.isoengen_US
dc.publisherElsevier Science BVen_US
dc.relation.isversionof10.1016/j.apsusc.2014.01.054en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZero-Bias Offseten_US
dc.subjectI-V Characterizationen_US
dc.subjectDark Currenten_US
dc.subjectQwipen_US
dc.subjectQuantum Well Devicesen_US
dc.subjectInfrared Photodetectorsen_US
dc.subjectAsymmetric Barrieren_US
dc.titleZero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectorsen_US
dc.typeconferenceObjecten_US
dc.relation.journalApplied Surface Scienceen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume318en_US
dc.identifier.startpage95en_US
dc.identifier.endpage99en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorErgün, Yüksel


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