dc.contributor.author | Çelik, Özlem | |
dc.contributor.author | Tıraş, Engin | |
dc.contributor.author | Ardalı, Şükrü | |
dc.contributor.author | Lisesivdin, Sefer Bora | |
dc.contributor.author | Özbay Ekmel | |
dc.date.accessioned | 2019-10-20T09:03:12Z | |
dc.date.available | 2019-10-20T09:03:12Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 1862-6351 | |
dc.identifier.uri | https://dx.doi.org/10.1002/pssc.201000594 | |
dc.identifier.uri | https://hdl.handle.net/11421/16653 | |
dc.description | 3rd International Symposium on Growth of III-Nitrides (ISGN) -- JUL 04-07, 2010 -- Montpellier, FRANCE | en_US |
dc.description | WOS: 000301569300044 | en_US |
dc.description.abstract | Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (E-F-E-1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (tau(q)) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m(0) and 0.22 m(0). Our results for in-plane effective mass are in good agreement with those reported in the literature | en_US |
dc.description.sponsorship | Univ Montpellier, Natl Centre Sci Res, Inst Phys, Conseil Regional Languedoc Roussillon, Montpellier Agglomerat, AIXTRON, SAFC Hitech | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Wiley-V C H Verlag GMBH | en_US |
dc.relation.ispartofseries | Physica Status Solidi C-Current Topics in Solid State Physics | |
dc.relation.isversionof | 10.1002/pssc.201000594 | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Shubnikov De Haas | en_US |
dc.subject | Effective Mass | en_US |
dc.subject | Quantum Lifetime | en_US |
dc.subject | Algan | en_US |
dc.title | Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs | en_US |
dc.type | conferenceObject | en_US |
dc.relation.journal | Physica Status Solidi C: Current Topics in Solid State Physics, Vol 8, No 5 | en_US |
dc.contributor.department | Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü | en_US |
dc.identifier.volume | 8 | en_US |
dc.identifier.issue | 5 | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
dc.contributor.institutionauthor | Tıraş, Engin | |
dc.contributor.institutionauthor | Ardalı, Şükrü | |