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dc.contributor.authorGüneş, M.
dc.contributor.authorErken, O.
dc.contributor.authorGümüş, C.
dc.contributor.authorYalaz, E.
dc.contributor.authorPesen, E.
dc.contributor.authorUkelge, M. O.
dc.contributor.authorHenini, M.
dc.date.accessioned2019-10-20T09:02:49Z
dc.date.available2019-10-20T09:02:49Z
dc.date.issued2016
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2015.1122244
dc.identifier.urihttps://hdl.handle.net/11421/16530
dc.descriptionWOS: 000371037600001en_US
dc.description.abstractOptical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose-Einstein Approximation to determine Debye temperature (beta), (Theta(E)) and thermal expansion coefficient (alpha), the exciton-phonon coupling strength (a(B)).en_US
dc.description.sponsorshipAdana Science and Technology University [MUHDBF.MLZM.2014-13]; Scientific and Technology Research Council of Turkey (TUBITAK) [114F294]; FAPESP [12/24055-6]; PVE-CAPES [A067_2013]en_US
dc.description.sponsorshipThis work was supported by Adana Science and Technology University [Project Number MUHDBF.MLZM.2014-13]; The Scientific and Technology Research Council of Turkey (TUBITAK) [Project Number 114F294]. We also acknowledge Brazilian Agencies FAPESP grant 12/24055-6 and PVE-CAPES grant A067_2013 for financial support.en_US
dc.language.isoengen_US
dc.publisherTaylor & Francis LTDen_US
dc.relation.isversionof10.1080/14786435.2015.1122244en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectVarshni Lawen_US
dc.subjectBose-Einsteinen_US
dc.subjectGamnasen_US
dc.subjectQuantum Wellen_US
dc.titleA comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBEen_US
dc.typearticleen_US
dc.relation.journalPhilosophical Magazineen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume96en_US
dc.identifier.issue3en_US
dc.identifier.startpage223en_US
dc.identifier.endpage229en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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