Güncel Gönderiler: Makale Koleksiyonu
Toplam kayıt 1058, listelenen: 981-1000
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Benzotriazole-Mediated Syntheses of Depsipeptides and Oligoesters
(American Chemical Society, 2011)Reactions of O-Pg(alpha-hydroxyacyl)benzotriazoles with (a) unprotected alpha-hydroxycarboxylic acids, (b) amino acids, and (c) amines afforded, respectively, chirally pure (a) oligoesters, (b) depsidipeptides, and (c) ... -
Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz region
(IOP Publishing LTD, 2011)GaAs/AlGaAs quantum wells doped with donor atoms are investigated for nonlinear optical applications in the THz range. The electronic properties of the quantum wells are obtained numerically by applying an iterative shooting ... -
Synthesis and antimicrobial investigation of some 5H-pyridazino[4,5-b]indoles
(Scientific Technical Research Council Turkey-Tubitak, 2013)Synthesis and in vitro antimicrobial activities are reported for a series of 1,3,5-substituted 4-oxo-3,4-dihydro-5H-pyridazino[4,5-b]indole derivatives. Corresponding pyridazino[4,5-b]indoles were prepared from ethyl ... -
Photophysics of novel coumarin-labeled depsipeptides in solution: sensing interactions with SDS micelle via TICT model
(Springer Wien, 2013)N-Acylbenzotriazoles enable the synthesis (69-92 % yield) of blue to green fluorescent coumarin-labeled depsidipeptides 8a-f (quantum yields 0.004-0.97) and depsitripeptides 12a-d (quantum yields 0.02-0.96). Detailed ... -
On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
(IOP Publishing LTD, 2013)We have calculated the binding energies of the donor states, 1s and 2p +/-, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the ... -
Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells
(Amer Inst Physics, 2012)Using the variational methods, we have calculated the binding energies of the lowest donor states, 1s and 2p(+/-), in wurtzite InGaN/GaN staggered quantum wells. The binding energies in narrow wells are larger in magnitude ... -
Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices
(Elsevier Science BV, 2016)Raman scattering study on a group of InAs/GaSb superlattice (SL) samples where the strain is systematically changed from tensile to compressive regime is presented. The effect of the lattice mismatch between the substrate ... -
Second harmonic generation in asymmetric MgSe/CdSe/ZnCdMgSe quantum well structures
(Wiley-V C H Verlag GMBH, 2017)MgSe/CdSe/ZnCdMgSe step quantum well structures and coupled quantum well structures under an applied electric field have been investigated for the process of second harmonic generation (SHG) with the double-resonant ... -
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
(Elsevier Science Sa, 2014)The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different ... -
A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE
(Taylor & Francis LTD, 2016)Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
(IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
(Amer Inst Physics, 2014)Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the ... -
Effects of magnetic field on the terahertz nonlinear optical properties in donor-doped GaAs/AlGaAs quantum wells
(Wiley-V C H Verlag GMBH, 2012)Effects of the magnetic field on nonlinear optical properties at THz range in GaAs/AlGaAs quantum wells doped with donor atoms are investigated. Expressions for the third-order nonlinear optical susceptibilities are obtained ... -
Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
(Elsevier Science BV, 2013)We have performed magneto-transport experiments in modulation-doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
(Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ... -
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
(Korean Inst Metals Materials, 2014)Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
(Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
(Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
(Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
(Elsevier Science Sa, 2016)In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters ...
