Yazar "Tansel, Tunay" için Makale Koleksiyonu listeleme
-
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
Tansel, Tunay; Hoştut, Mustafa; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2017)We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
Tansel, Tunay; Hoştut, Mustafa; ElagÖz, S.; Kılıç, A.; Ergün, Y.; Aydınlı, A. (Academic Press LTD- Elsevier Science LTD, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface
Kılıç, A.; Tansel, Tunay; Hoştut, M.; ElagÖz, S.; Ergün, Y. (IOP Publishing LTD, 2018)We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off ... -
Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
Akel, K.; Hoştut, Mustafa; Tansel, Tunay; Ergün, Y. (Amer Inst Physics, 2018)We investigate the band properties of InAs/AlSb/GaSb (N-structure) and InAs/GaSb material based type II superlattice (T2SL) photodedectors. The superlattice empirical pseudopotential method is used to define band-structures ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
Hoştut, M.; Alyörük, M.; Tansel, Tunay; Kılıç, A.; Turan, Raşit; Aydınlı, A.; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...