Güncel Gönderiler: Fizik Bölümü
Toplam kayıt 1178, listelenen: 841-860
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Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors
(Elsevier Science BV, 2014)In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of ... -
N structure for type-II superlattice photodetectors
(Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al (x) Ga1-x As quantum well structures
(Springer, 2012)In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al (x) Ga1-x ... -
Low dark current N structure superlattice MWIR photodetectors
(Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
Electrochemical and electrical properties of novel mono and ball-type phthalocyanines
(Pergamon-Elsevier Science LTD, 2013)New mononuclear Co(II) phthalocyanine 3 and ball-type homobinuclear Cu(II)-Cu(II) and Zn(II)-Zn(II) phthalocyanines, 4 and 5 respectively, were synthesized using the corresponding metal salts and the 4,4'-(methane-5-meth ... -
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
(IOP Publishing LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs
(Elsevier Science BV, 2014)Undoped InAs1-xSbx epilayers with different compositions (0.55 <= x <= 0.78) were grown by molecular beam epitaxy on semi-insulating GaAs (1 0 0) substrates. The quality of the samples was determined by high resolution ... -
Experimental and theoretical investigations of novel synthesized organo-silane compounds and modified mesoporous silica materials
(Elsevier Science BV, 2019)In this study, the novel compounds (2,5-dimethoxy-methanimine propyltriethoxysilane; S1 and 3-ethoxy-salicylaldimine propyltriethoxysilane; S2) derived from aminopropyltriethoxysilane (APTES) were synthesized by a simple ... -
A new 2,2 '-oxydianiline derivative symmetrical azomethine compound containing thiophene units: Synthesis, spectroscopic characterization (UV-Vis, FTIR, H-1 and C-13 NMR) and DFT calculations
(Elsevier Science BV, 2018)In this study, a new symmetrical azomethine compound, N,N'-oxydiphenylenebis(5-(thiophen-2-yl) salicylidenimine OPBTS (5), having two thiophene rings and N, O donor groups, was successfully prepared by a simple condensation ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
(Spie-Int Soc Optical Engineering, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
Fourier transform technique in variational treatment of two-electron parabolic quantum dot
(IOP Publishing LTD, 2009)In this work, we propose an efficient method of reducing the computational effort of variational calculation with a Hylleraas-like trial wavefunction. The method consists of introducing integra transforms for the terms as ... -
I-V characterization of a quantum well infrared photodetector with stepped and graded barriers
(Academic Press LTD- Elsevier Science LTD, 2012)I-V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been clone under dark at temperatures between 20-300 K. Different current transport mechanisms and ... -
I-V characterization of a staircase quantum well infrared photodetector
(Wiley-V C H Verlag GMBH, 2011)In this work, a quantum well infrared photodetector structure which consists of three different well thicknesses with three different barrier compositions producing a staircase-like conduction band profile with the reputation ... -
Dark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structure
(Elsevier Science BV, 2013)In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. Measured dark current density voltage (J(d)-V) ... -
AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices
(Walter De Gruyter GMBH, 2015)This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice ... -
Broadband staircase quantum well infrared photodetector: working in long wavelength infrared range (LWIR)
(Wiley-V C H Verlag GMBH, 2007)We present a theoretical investigation of a staircase-like quantum well infrared photodetector (QWIP). it detects wavelength between 7.6 mu m and 13.5 mu m range at an applied electric field of F = 1.9x10(4) V/cm at 77 K. ... -
Variational Computations for Excitons in Quantum Dots: a Quantum Monte Carlo Study
(World Scientific Publ Co Pte LTD, 2011)A study of variational wave functions for calculation of the ground-state energies of excitons confined in a two-dimensional (2D) disc-like and three-dimensional (3D) spherical parabolic GaAs quantum dots (QDs) is presented. ... -
Characterization and ethylene adsorption of natural and modified clinoptilolites
(Elsevier Science BV, 2008)The ethylene adsorption of Turkey clinoptilolite-rich tuff from Gordes and Bigadic region of western of Anatolia and their exchanged forms (K+, Na+ and Ca2+) were investigated. The clinoptilolite samples were characterized ... -
Gibbs Free Energy Assisted Passivation Layers
(Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
(Academic Press LTD- Elsevier Science LTD, 2017)We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits ...