Güncel Gönderiler: Fizik Bölümü
Toplam kayıt 1178, listelenen: 1101-1120
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Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells
(Amer Inst Physics, 2012)Using the variational methods, we have calculated the binding energies of the lowest donor states, 1s and 2p(+/-), in wurtzite InGaN/GaN staggered quantum wells. The binding energies in narrow wells are larger in magnitude ... -
Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices
(Elsevier Science BV, 2016)Raman scattering study on a group of InAs/GaSb superlattice (SL) samples where the strain is systematically changed from tensile to compressive regime is presented. The effect of the lattice mismatch between the substrate ... -
Second harmonic generation in asymmetric MgSe/CdSe/ZnCdMgSe quantum well structures
(Wiley-V C H Verlag GMBH, 2017)MgSe/CdSe/ZnCdMgSe step quantum well structures and coupled quantum well structures under an applied electric field have been investigated for the process of second harmonic generation (SHG) with the double-resonant ... -
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
(Elsevier Science Sa, 2014)The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different ... -
A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE
(Taylor & Francis LTD, 2016)Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
(IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
(Amer Inst Physics, 2014)Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the ... -
Effects of magnetic field on the terahertz nonlinear optical properties in donor-doped GaAs/AlGaAs quantum wells
(Wiley-V C H Verlag GMBH, 2012)Effects of the magnetic field on nonlinear optical properties at THz range in GaAs/AlGaAs quantum wells doped with donor atoms are investigated. Expressions for the third-order nonlinear optical susceptibilities are obtained ... -
Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
(Elsevier Science BV, 2013)We have performed magneto-transport experiments in modulation-doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
(Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ... -
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
(Korean Inst Metals Materials, 2014)Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
(Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Determination of dislocation densities in InN
(Wiley-V C H Verlag GMBH, 2012)The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ... -
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
(Wiley-V C H Verlag GMBH, 2011)Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
(Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
(Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
(Elsevier Science Sa, 2016)In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
(Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ... -
Complementary and alternative technique for the determination of electron effective mass: quantum Hall effect
(Natl Inst Optoelectronics, 2016)The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at ... -
1,1 '-Bis-(n-benzotriazolyl) ferrocenecarboxamide: Precursor for synthesis of 1,1 '-bis-ferrocenoyl esters and thioesters
(Elsevier Science Sa, 2014)A microwave assisted synthesis methodology has been presented for the preparation of the bisferrocenoyl esters and thioesters. 1,1'-bis-ferrocenedicarboxylic acid was derivatized using direct H-1-benzotriazole/SOCl2 ...
