Konu "Superlattice" için Fizik Bölümü listeleme
Toplam kayıt 8, listelenen: 1-8
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Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
(IOP Publishing LTD, 2015)We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both ... -
Electrical and optical performance of InAs / AlSb / GaSb superlattice photodetector
(TANGER Ltd., 2015)We report on electrical and optical performance of InAs/AlSb/GaSb type-II superlattice photodetectors. The detector structure is designed to operate in the MWIR domain with a cut-off wavelength of 4.3 µm at 125 K. The ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
(Academic Press LTD- Elsevier Science LTD, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
Electronic and optical properties of 4.2 mu m"N" structured superlattice MWIR photodetectors
(Elsevier Science BV, 2013)We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ... -
Gibbs Free Energy Assisted Passivation Layers
(Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
Low dark current N structure superlattice MWIR photodetectors
(Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
(Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
(Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ...