Konu "Gan Heterostructure" için Araştırma Çıktıları | TR-Dizin | WoS | Scopus | PubMed listeleme
Toplam kayıt 4, listelenen: 1-4
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Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements
(Natl Inst Optoelectronics, 2012)The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational ... -
Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Ramanscattering measurements
(2012)The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational ... -
Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures
(Springer, 2012)The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
(Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...