Yazar "Tıraş, Engin" için listeleme
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Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
Balkan, Naci; Tıraş, Engin; Erol, Ayşe; Güneş, Mustafa; Ardalı, Şükrü; Arıkan, Çetin; Gümüş, Cebrail (Springer, 2012)We report on the Mg-doped, indium-rich Ga (x) In1-x N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of ... -
AlGaN/GaN heteroeklemlerde sıcak elektron güç kaybı mekanizmaları
Çelik, Özlem (Anadolu Üniversitesi, 2011)Metalorganic chemical vapor deposition (MOCVD) tekniğiyle büyütülmüş AlGaN/GaN heteroeklemlerde klasik Hall olayı ölçümleri sabit manyetik alan altında 1,8 - 275 K aralığında sıcaklığın fonksiyonu olarak yapıldı. Elde ... -
Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Tıraş, Engin; Tıraş, Tülay; Özçelik, Süleyman; Özbay Ekmel (Springer, 2017)High-resistive GaN (> 10(8) a"broken vertical bar cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN ... -
Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
Ardalı, Şükrü; Tıraş, Engin (Elsevier Science BV, 2013)We have performed magneto-transport experiments in modulation-doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) ... -
Complementary and alternative technique for the determination of electron effective mass: quantum Hall effect
Ardalı, Şükrü; Tıraş, Engin; Arslan, E.; Özbay E. (Natl Inst Optoelectronics, 2016)The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at ... -
Contactless electron effective mass determination in GaInNAs/GaAs quantum wells
Tıraş, Engin; Ardalı, Şükrü (Springer, 2013)The electron effective masses in n-type modulation doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions of y = 0.004 and 0.010 were investigated experimentally. Two experimental techniques: magnetic field ... -
Determination of dislocation densities in InN
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2012)The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ... -
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
Tıraş, Engin; Tanışlı, Murat; Balkan, Naci; Ardalı, Şükrü; Iliopoulos, E.; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2012)The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532?nm ... -
Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements
Tıraş, Engin (Natl Inst Optoelectronics, 2012)The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational ... -
Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Ramanscattering measurements
Tıraş, Engin (2012)The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational ... -
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Wiley-V C H Verlag GMBH, 2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (De Gruyter Open LTD, 2012)The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect ... -
Effective mass of electron in monolayer graphene: Electron-phonon interaction
Tıraş, Engin; Ardalı, Şükrü; Tıraş, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Özbay E. (Amer Inst Physics, 2013)Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m(-1) and magnetic fields up to 11 T, have been used to investigate the electronic ... -
Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 mu m operation
Chaqmaqchee, F. A. I.; Mazzucato, S.; Sun, Y.; Balkan, Naci; Tıraş, Engin; Hugues, M.; Hopkinson, M. (Elsevier Science BV, 2012)The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at ... -
Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering
Tıraş, Engin; Ardalı, Şükrü (Wiley-V C H Verlag GMBH, 2013)The two-dimensional (2D) electron and hole energy relaxation associated with acoustic phonon emission in n- and p-type modulation doped Ga0.7In0.3NyAs1y/GaAs quantum wells has been investigated experimentally using ... -
Elektronik transport mekanizmalarının pulslu ölçüm teknikleri ile incelenmesi
Mutlu, Selman (Anadolu Üniversitesi, 2013)R Yazılımı kullanılarak tek ve iki değişkenli durum için regresvon ağacına dayalı iki ayrı program yazılmıştır. MARS yöntemi kullanılarak ağır metal kirlilik verisini modellemek için R Yazılımı ile tek ve iki değişkenli ... -
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
Atmaca, G.; Ardalı, Şükrü; Narin, P.; Kutlu, E.; Lisesivdin, Sefer Bora; Malin, T.; Tıraş, Engin (Elsevier Science Sa, 2016)In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters ... -
Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures
Tıraş, Engin; Ardalı, Şükrü; Arslan, E.; Özbay E. (Springer, 2012)The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ... -
GaN tabanlı sıcak elektron ışın yayıcı hetero-yapılar
Sönmez, Feyza, 1991- (Anadolu Üniversitesi, 2017)Bu çalışmada, elektronik ve opto-elektronik aygıtların üretilmesinde kullanılan InxGa1?xN/GaN çoklu kuantum kuyu yapıların optik özellikleri incelenmiştir. Farklı kuantum kuyu sayısına ve In miktarına sahip olan örnekler ... -
Grafen yapılarda galvanomagnetik ölçümler
Fırat, Hakan Asaf (Anadolu Üniversitesi, 2017)Grafen sahip olduğu mükemmel özelliklerinden dolayı büyük ilgi çekmektedir. Grafenin en önemli özelliklerinden biri elektronik aygıtlar için gelecek vaat eden malzeme olmasına neden olan elektronik özellikleridir. Bu tez ...
