Yazar "Lisesivdin, S. B." için listeleme
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Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
Tıraş, Engin; Atmaca, G.; Lisesivdin, S. B.; Ardalı, Şükrü; Malin, T.; Mansurov, V.; Zhuravlev, K. (Institute of Electrical and Electronics Engineers Inc., 2016)The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Atmaca, G.; Ardalı, Şükrü; Tıraş, Engin; Malin, T.; Mansurov, V. G.; Zhuravlev, K. S.; Lisesivdin, S. B. (Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Ardalı, Şükrü; Atmaca, G.; Lisesivdin, S. B.; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tıraş, Engin (Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ...
