Yazar "Güneş, Mustafa" için listeleme
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Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
Balkan, Naci; Tıraş, Engin; Erol, Ayşe; Güneş, Mustafa; Ardalı, Şükrü; Arıkan, Çetin; Gümüş, Cebrail (Springer, 2012)We report on the Mg-doped, indium-rich Ga (x) In1-x N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of ... -
Determination of dislocation densities in InN
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2012)The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ... -
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2011)Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ... -
Thermally activated flux mechanism in Mg-doped InN epitaxial film
Güneş, Mustafa; Akyol, Mustafa; Ekicibil, Ahmet; Tıraş, Engin (Taylor & Francis LTD, 2017)The superconducting behaviour of InN has been observed in many experiments where the origin of superconductivity is addressed to presence of (i) In-In chains in ab-plane, (ii) specific carrier density range limited Mott ...
