Yazar "Güneş, M." için listeleme
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A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE
Güneş, M.; Erken, O.; Gümüş, C.; Yalaz, E.; Pesen, E.; Ukelge, M. O.; Henini, M. (Taylor & Francis LTD, 2016)Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral ... -
I-V characterization of a quantum well infrared photodetector with stepped and graded barriers
Nutku, Ferhat; Erol, A.; Güneş, M.; Buklu, L. B.; Ergün, Y.; Arıkan, M. C. (Academic Press LTD- Elsevier Science LTD, 2012)I-V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been clone under dark at temperatures between 20-300 K. Different current transport mechanisms and ... -
In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
Tıraş, Engin; Güneş, M.; Balkan, Naci; Schaff, W. J. (Wiley-Blackwell, 2010)The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon ... -
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Tıraş, Engin; Balkan, Naci; Ardalı, Şükrü; Güneş, M.; Fontaine, C.; Arnoult, A. (Taylor & Francis LTD, 2011)Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields ... -
Superconductivity in heavily compensated Mg-doped InN
Tıraş, Engin; Güneş, M.; Balkan, Naci; Airey, R.; Schaff, W. J. (Amer Inst Physics, 2009)We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The ... -
Superconductivity in MBE grown InN
Güneş, M.; Balkan, Naci; Tıraş, Engin; Ardalı, Şükrü; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2011)We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ...
