Yazar "Balkan, Naci" için listeleme
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Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
Balkan, Naci; Tıraş, Engin; Erol, Ayşe; Güneş, Mustafa; Ardalı, Şükrü; Arıkan, Çetin; Gümüş, Cebrail (Springer, 2012)We report on the Mg-doped, indium-rich Ga (x) In1-x N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of ... -
Determination of dislocation densities in InN
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2012)The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ... -
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
Tıraş, Engin; Tanışlı, Murat; Balkan, Naci; Ardalı, Şükrü; Iliopoulos, E.; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2012)The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532?nm ... -
Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 mu m operation
Chaqmaqchee, F. A. I.; Mazzucato, S.; Sun, Y.; Balkan, Naci; Tıraş, Engin; Hugues, M.; Hopkinson, M. (Elsevier Science BV, 2012)The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at ... -
In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
Tıraş, Engin; Güneş, M.; Balkan, Naci; Schaff, W. J. (Wiley-Blackwell, 2010)The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon ... -
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2011)Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ... -
Performance study of SQW GaInNAs fabry-perot lasers
Tıraş, Engin; Hepburn, C. J.; Balkan, Naci; Saarinen, M.; Pessa, M.; Jouhti, T. (Wiley-V C H Verlag GMBH, 2007)The work presented here is concerned with studies of the operational characteristics of single-quantum-well GaInNAs/GaAs Fabry-Perot lasers, where identical layer structures with differing cavity lengths are evaluated both ... -
Power Loss Mechanisms in Indium-Rich InGaN Samples
Tıraş, Engin; Mutlu, Selman; Balkan, Naci (Springer, 2016)Molecular beam epitaxy-grown InxGa1-xN/GaN samples with indium fraction x ranging between 0.44 and 0.784 were studied by pulsed current-voltage (I-V) measurements at 1.7 K. The drift velocity, electron mobility, and ... -
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Tıraş, Engin; Balkan, Naci; Ardalı, Şükrü; Güneş, M.; Fontaine, C.; Arnoult, A. (Taylor & Francis LTD, 2011)Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields ... -
Superconductivity in heavily compensated Mg-doped InN
Tıraş, Engin; Güneş, M.; Balkan, Naci; Airey, R.; Schaff, W. J. (Amer Inst Physics, 2009)We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The ... -
Superconductivity in MBE grown InN
Güneş, M.; Balkan, Naci; Tıraş, Engin; Ardalı, Şükrü; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2011)We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ...