Yazar "Atmaca, G." için listeleme
-
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
Atmaca, G.; Ardalı, Şükrü; Narin, P.; Kutlu, E.; Lisesivdin, Sefer Bora; Malin, T.; Tıraş, Engin (Elsevier Science Sa, 2016)In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters ... -
Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
Tıraş, Engin; Atmaca, G.; Lisesivdin, S. B.; Ardalı, Şükrü; Malin, T.; Mansurov, V.; Zhuravlev, K. (Institute of Electrical and Electronics Engineers Inc., 2016)The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Atmaca, G.; Ardalı, Şükrü; Tıraş, Engin; Malin, T.; Mansurov, V. G.; Zhuravlev, K. S.; Lisesivdin, S. B. (Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Ardalı, Şükrü; Atmaca, G.; Lisesivdin, S. B.; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tıraş, Engin (Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ...
