Yazar "Arıkan, Bülent" için listeleme
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Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
Korkmaz, Melih; Kaldirim, Melih; Arıkan, Bülent; Serincan, Uğur; Aslan, Bülent (IOP Publishing LTD, 2015)We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both ... -
Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
Serincan, Uğur; Arıkan, Bülent; Şenel, Onur (Academic Press LTD- Elsevier Science LTD, 2018)We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
InAs/GaSb tip-II süperörgü kızılötesi fotodedektör yapıların MBE tekniği ile GaSb ve GaAs alttaşlar üzerine büyütülmesi
Arıkan, Bülent (Anadolu Üniversitesi, 2015)Bu tez çalışmasında, orta ve uzun dalgaboyu kızılötesi bölgelerinde gösterdikleri yüksek performans ve yüksek sıcaklık uygulamaları ile yeni nesil kızılötesi dedektör teknolojisinde öne çıkan InAs/GaSb Tip-II süperörgü ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
Arıkan, Bülent; Korkmaz, Güven; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Patara Hurmalık Hamamı antik yapı malzemelerinin mikroanaliz teknikleri ve spektroskopik yöntemlerle karakterizasyonu
Arıkan, Bülent (Anadolu Üniversitesi, 2009)Arkeolojik buluntuların ve eski yapılarda kullanılan yapı malzemelerinin laboratuar analizleri, geçmiş dönemlerde yaşamış toplumların sahip oldukları malzeme bilgisini ve teknolojisini anlamak, mevcut yapılara zarar veren ... -
Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
Korkmaz, Melih; Arıkan, Bülent; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (IOP Publishing LTD, 2018)We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the ... -
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
Arpapay, B.; Şahin, S.; Arıkan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2014)The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
Arıkan, Bülent; Korkmaz, Melih; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ...
